Part Number Hot Search : 
40N120 SP3136F FN3684 P7831132 MAX20003 ECC40 24010 AT45D
Product Description
Full Text Search
 

To Download HV200F04 Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
  h v 2 0 0 f 0 4 20 0 m a 4 .0 kv 100ns -- high v oltage s ilicon r ectifier d iode gete electronic co.,ltd http://www.getedz.com http://www.hvgtsemi.com e - mai: sales@getedz.com getai electronic device co.,ltd tel:0086 - 20 - 81 84 9628 fax:0086 - 20 - 8184 9638 2017 - 08 1 / 2 introduce : hvgt high voltage silicon rectifier diodes is made of high quality glass passivated chip and high reliability epoxy resin sealing structure, and through professional testing equipment inspection qualified after to customers. f eatures: 1. high reliability design . 2. high voltage design . 3. h igh frequen cy . 4. conform to rohs . 5. epoxy resin molded in vacuumhave anticorrosion in the surface . a pplications: 1. h igh voltage multiplier circuit 2. electrostatic generator circuit . 3. g eneral purpose high voltage rectifier. 4. other . mechanical data: 1. case : epoxy resin molding. 2. terminal: w elding axis . 3. net weight : 0.28 grams (approx) . shape display: s ize: (unit:mm) hvgt name : do - 308 maximum ratings and characteristics : ( absolute maximum ratings ) items symbols condition data v alue units repetitive peak renerse voltage v rrm t a = 2 5c 4 .0 kv average forward current maximum i favm t a = 2 5c 200 ma t oil = -- c -- ma suege current i fsm t a =25c ; h alf - s ine w ave ; 8.3 ms 10 a junction temperature t j - 40 ~ + 1 25 c allowable operation case temperature tc 125 c storage temperature t stg - 40 ~ + 1 25 c electrical characteristics: t a =25c ( unless o therwise s pecified ) items symbols condition data value units maximum forward voltage drop v f at 25c ; at i f (av) 13 v maximum reverse current i r 1 at 25c ; at v rrm 2.0 ua i r 2 at 100c ; at v rrm 20 ua maximum reverse recovery time t rr a t 25c ; i f = 0.5i r ; i r = i favm ; i rr = 0. 25 i r 100 ns junction capacitance c j at 25c ; v r =0v ; f=1mhz 15 pf
h v 2 0 0 f 0 4 20 0 m a 4 .0 kv 100ns -- high v oltage s ilicon r ectifier d iode gete electronic co.,ltd http://www.getedz.com http://www.hvgtsemi.com e - mai: sales@getedz.com getai electronic device co.,ltd tel:0086 - 20 - 81 84 9628 fax:0086 - 20 - 8184 9638 2017 - 08 2 / 2 fig 1 fig 2 forward current derating curve reverse recovery measurement waveform typical data capture points: i f =0.5i r , i r ,i rr =0.25i r fig 3 non - repetitive surge current marking type code cathode mark h v 2 0 0 f 0 4 --


▲Up To Search▲   

 
Price & Availability of HV200F04

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X